Salary: 18-30KRMB/ month *14 months

Responsibilities:

1. Research and development of epitaxial growth process according to the epitaxial structure design of devices

2. Prepare daily epitaxial growth program of MOCVD machine

3. Optimize the epitaxial process according to material testing and device feedback

4. Responsible for the daily monitoring of MOCVD machine's process and equipment, as well as the discovery and treatment of process or equipment abnormalities

5. Responsible for the arrangement, storage and regular archiving of data and technical documents generated by epitaxial growth

6. Assist in the application of relevant patents and scientific research projects at home and abroad

Requirements:

1. Master's degree or doctor's degree in condensed matter physics, semiconductor physics, microelectronics, etc

2.At least 2 or 3 years working experience in epitaxy process of gallium nitride MOCVD is preferred

3. Experience in extensional R&D of AIXTRON Planetary MOCVD is preferred

4. Experience in MOCVD and MBE use and Ⅲ-Ⅴ compound semiconductor material growth is preferred during master degree

5.Familiar with gallium nitride related materials and device testing (AFM, XRD, SEM, TEM, SIMS, CV, Hall, etc.)